APT40SM120S product image

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Product details

APT40SM120S

Availability on request

Manufacturer: Microsemi Corporation
Category: Transistors - FETs, MOSFETs - Single
Package: Bulk

Description

N-Channel 1200 V 41A (Tc) 273W (Tc) Surface Mount D3Pak

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Drain to Source Voltage (Vdss): 1200 V
Drive Voltage (Max Rds On, Min Rds On): 20V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 1000 V
Mfr: Microsemi Corporation
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Bulk
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Power Dissipation (Max): 273W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Series: -
Supplier Device Package: D3Pak
Technology: SiCFET (Silicon Carbide)
Vgs (Max): +25V, -10V
Vgs(th) (Max) @ Id: 3V @ 1mA (Typ)