FCPF190N65FL1 product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

FCPF190N65FL1

Availability on request

Manufacturer: onsemi
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

N-Channel 650 V 20.6A (Tc) 39W (Tc) Through Hole TO-220F-3

Datasheet View datasheet

Specifications

Base Product Number: FCPF190
Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc)
Drain to Source Voltage (Vdss): 650 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3055 pF @ 100 V
Mfr: onsemi
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-220-3 Full Pack
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Series: SuperFET® II
Supplier Device Package: TO-220F-3
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 5V @ 250µA