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Product details

VS-GT100TP120N

Availability on request

Manufacturer: Vishay General Semiconductor - Diodes Division
Category: Transistors - IGBTs - Modules
Package: Bulk

Description

IGBT Module Trench Half Bridge 1200 V 180 A 652 W Chassis Mount INT-A-PAK

Datasheet Not provided

Specifications

Base Product Number: GT100
Configuration: Half Bridge
Current - Collector (Ic) (Max): 180 A
Current - Collector Cutoff (Max): 5 mA
IGBT Type: Trench
Input: Standard
Input Capacitance (Cies) @ Vce: 12.8 nF @ 30 V
Mfr: Vishay General Semiconductor - Diodes Division
Mounting Type: Chassis Mount
NTC Thermistor: No
Operating Temperature: 175°C (TJ)
Package: Bulk
Package / Case: INT-A-PAK (3 + 4)
Power - Max: 652 W
Series: -
Supplier Device Package: INT-A-PAK
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 100A
Voltage - Collector Emitter Breakdown (Max): 1200 V