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Product details

VS-GB200TS60NPBF

Availability on request

Manufacturer
Vishay General Semiconductor - Diodes Division
Category
Transistors - IGBTs - Modules
Package
Bulk

Description

IGBT Module NPT Half Bridge 600 V 209 A 781 W Chassis Mount INT-A-PAK

Datasheet Not provided
Specifications
Base Product Number
GB200
Configuration
Half Bridge
Current - Collector (Ic) (Max)
209 A
Current - Collector Cutoff (Max)
200 µA
IGBT Type
NPT
Input
Standard
Mfr
Vishay General Semiconductor - Diodes Division
Mounting Type
Chassis Mount
NTC Thermistor
No
Operating Temperature
-40°C ~ 150°C (TJ)
Package
Bulk
Package / Case
INT-A-PAK (3 + 4)
Power - Max
781 W
Series
-
Supplier Device Package
INT-A-PAK
Vce(on) (Max) @ Vge, Ic
2.84V @ 15V, 200A
Voltage - Collector Emitter Breakdown (Max)
600 V