Product image not available

Product details

VS-GB200TH120U

Availability on request

Manufacturer: Vishay General Semiconductor - Diodes Division
Category: Transistors - IGBTs - Modules
Package: Bulk

Description

IGBT Module Half Bridge 1200 V 330 A 1316 W Chassis Mount Double INT-A-PAK

Datasheet Not provided

Specifications

Base Product Number: GB200
Configuration: Half Bridge
Current - Collector (Ic) (Max): 330 A
Current - Collector Cutoff (Max): 5 mA
IGBT Type: -
Input: Standard
Input Capacitance (Cies) @ Vce: 16.9 nF @ 30 V
Mfr: Vishay General Semiconductor - Diodes Division
Mounting Type: Chassis Mount
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Package: Bulk
Package / Case: Double INT-A-PAK (3 + 4)
Power - Max: 1316 W
Series: -
Supplier Device Package: Double INT-A-PAK
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 200A
Voltage - Collector Emitter Breakdown (Max): 1200 V