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Product details

VS-GB100TH120U

Availability on request

Manufacturer: Vishay General Semiconductor - Diodes Division
Category: Transistors - IGBTs - Modules
Package: Bulk

Description

IGBT Module NPT Half Bridge 1200 V 200 A 1136 W Chassis Mount Double INT-A-PAK

Datasheet Not provided

Specifications

Base Product Number: GB100
Configuration: Half Bridge
Current - Collector (Ic) (Max): 200 A
Current - Collector Cutoff (Max): 5 mA
IGBT Type: NPT
Input: Standard
Input Capacitance (Cies) @ Vce: 8.45 nF @ 20 V
Mfr: Vishay General Semiconductor - Diodes Division
Mounting Type: Chassis Mount
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Package: Bulk
Package / Case: Double INT-A-PAK (3 + 4)
Power - Max: 1136 W
Series: -
Supplier Device Package: Double INT-A-PAK
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 100A
Voltage - Collector Emitter Breakdown (Max): 1200 V