IRGP6650D-EPBF product image

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Product details

IRGP6650D-EPBF

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - IGBTs - Single
Package: Tube

Description

IGBT 600 V 80 A 306 W Through Hole TO-247AD

Datasheet Not provided

Specifications

Current - Collector (Ic) (Max): 80 A
Current - Collector Pulsed (Icm): 105 A
Gate Charge: 75 nC
IGBT Type: -
Input Type: Standard
Mfr: Infineon Technologies
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Package: Tube
Package / Case: TO-247-3
Power - Max: 306 W
Reverse Recovery Time (trr): 50 ns
Series: -
Supplier Device Package: TO-247AD
Switching Energy: 300µJ (on), 630µJ (off)
Td (on/off) @ 25°C: 40ns/105ns
Test Condition: 400V, 35A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 35A
Voltage - Collector Emitter Breakdown (Max): 600 V