DN2535N3-G product image

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Product details

DN2535N3-G

Availability on request

Manufacturer: Microchip Technology
Category: Transistors - FETs, MOSFETs - Single
Package: Bag

Description

N-Channel 350 V 120mA (Tj) 1W (Tc) Through Hole TO-92 (TO-226)

Datasheet Not provided

Specifications

Base Product Number: DN2535
Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
Drain to Source Voltage (Vdss): 350 V
Drive Voltage (Max Rds On, Min Rds On): 0V
FET Feature: Depletion Mode
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Mfr: Microchip Technology
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V
Series: -
Supplier Device Package: TO-92 (TO-226)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: -