2SK4124-1E product image

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Product details

2SK4124-1E

Availability on request

Manufacturer: onsemi
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

N-Channel 500 V 20A (Ta) 2.5W (Ta), 170W (Tc) Through Hole TO-3P-3L

Datasheet Not provided

Specifications

Base Product Number: 2SK4124
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drain to Source Voltage (Vdss): 500 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 46.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
Mfr: onsemi
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Package: Tube
Package / Case: TO-3P-3, SC-65-3
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 8A, 10V
Series: -
Supplier Device Package: TO-3P-3L
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: -