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2N6052 PBFREE product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

2N6052 PBFREE

Availability on request

Manufacturer
Central Semiconductor Corp
Category
Transistors - Bipolar (BJT) - Single
Package
Tube

Description

Bipolar (BJT) Transistor PNP 100 V 12 A 4MHz 150 W Through Hole TO-3

Specifications
Current - Collector (Ic) (Max)
12 A
Current - Collector Cutoff (Max)
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 6A, 3V
Frequency - Transition
4MHz
Mfr
Central Semiconductor Corp
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Package
Tube
Package / Case
TO-204AA, TO-3
Power - Max
150 W
Series
-
Supplier Device Package
TO-3
Transistor Type
PNP
Vce Saturation (Max) @ Ib, Ic
3V @ 120mA, 12A
Voltage - Collector Emitter Breakdown (Max)
100 V