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2N2905A PBFREE product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

2N2905A PBFREE

Availability on request

Manufacturer
Central Semiconductor Corp
Category
Transistors - Bipolar (BJT) - Single
Package
Bulk

Description

Bipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 600 mW Through Hole TO-39

Specifications
Current - Collector (Ic) (Max)
600 mA
Current - Collector Cutoff (Max)
10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA, 10V
Frequency - Transition
200MHz
Mfr
Central Semiconductor Corp
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Package
Bulk
Package / Case
TO-205AD, TO-39-3 Metal Can
Power - Max
600 mW
Series
-
Supplier Device Package
TO-39
Transistor Type
PNP
Vce Saturation (Max) @ Ib, Ic
1.6V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
60 V