3N163-E3 product image

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Product details

3N163-E3

Availability on request

Manufacturer: Vishay Siliconix
Category: Transistors - FETs, MOSFETs - Single
Package: Bulk

Description

P-Channel 40 V 50mA (Ta) 375mW (Ta) Through Hole TO-72

Datasheet Not provided

Specifications

Base Product Number: 3N163
Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
Drain to Source Voltage (Vdss): 40 V
Drive Voltage (Max Rds On, Min Rds On): 20V
FET Feature: -
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3.5 pF @ 15 V
Mfr: Vishay Siliconix
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Power Dissipation (Max): 375mW (Ta)
Rds On (Max) @ Id, Vgs: 250Ohm @ 100µA, 20V
Series: -
Supplier Device Package: TO-72
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 5V @ 10µA