CSD19531KCS product image

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Product details

CSD19531KCS

Availability on request

Manufacturer: Texas Instruments
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

N-Channel 100 V 100A (Ta) 214W (Tc) Through Hole TO-220-3

Datasheet Not provided

Specifications

Base Product Number: CSD19531
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3870 pF @ 50 V
Mfr: Texas Instruments
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tube
Package / Case: TO-220-3
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 60A, 10V
Series: NexFET™
Supplier Device Package: TO-220-3
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3.3V @ 250µA