APTM120DA30CT1G product image

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Product details

APTM120DA30CT1G

Availability on request

Manufacturer: Microchip Technology
Category: Transistors - FETs, MOSFETs - Single
Package: Bulk

Description

N-Channel 1200 V 31A (Tc) 657W (Tc) Chassis Mount SP1

Datasheet Not provided

Specifications

Base Product Number: APTM120
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drain to Source Voltage (Vdss): 1200 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 560 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14560 pF @ 25 V
Mfr: Microchip Technology
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Package: Bulk
Package / Case: SP1
Power Dissipation (Max): 657W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 25A, 10V
Series: POWER MOS 8™
Supplier Device Package: SP1
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 5V @ 2.5mA