RN1441ATE85LF product image

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Product details

RN1441ATE85LF

Availability on request

Manufacturer: Toshiba Semiconductor and Storage
Category: Transistors - Bipolar (BJT) - Single, Pre-Biased
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 20 V 300 mA 30 MHz 200 mW Surface Mount S-Mini

Datasheet Not provided

Specifications

Base Product Number: RN1441
Current - Collector (Ic) (Max): 300 mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 4mA, 2V
Frequency - Transition: 30 MHz
Mfr: Toshiba Semiconductor and Storage
Mounting Type: Surface Mount
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: TO-236-3, SC-59, SOT-23-3
Power - Max: 200 mW
Resistor - Base (R1): 5.6 kOhms
Series: -
Supplier Device Package: S-Mini
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA
Voltage - Collector Emitter Breakdown (Max): 20 V