2SK2009TE85LF product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

2SK2009TE85LF

Availability on request

Manufacturer: Toshiba Semiconductor and Storage
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

N-Channel 30 V 200mA (Ta) 200mW (Ta) Surface Mount SC-59-3

Datasheet Not provided

Specifications

Base Product Number: 2SK2009
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 2.5V
FET Feature: -
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 3 V
Mfr: Toshiba Semiconductor and Storage
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50MA, 2.5V
Series: -
Supplier Device Package: SC-59-3
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 1.5V @ 100µA