APTC90DAM60T1G product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

APTC90DAM60T1G

Availability on request

Manufacturer: Microsemi Corporation
Category: Transistors - FETs, MOSFETs - Single
Package: Tray

Description

N-Channel 900 V 59A (Tc) 462W (Tc) Chassis Mount SP1

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Drain to Source Voltage (Vdss): 900 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: Super Junction
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 100 V
Mfr: Microsemi Corporation
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Package: Tray
Package / Case: SP1
Power Dissipation (Max): 462W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V
Series: CoolMOS™
Supplier Device Package: SP1
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3.5V @ 6mA