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Product details

APTGT100DH60T3G

Availability on request

Manufacturer: Microsemi Corporation
Category: Transistors - IGBTs - Modules
Package: Bulk

Description

IGBT Module Trench Field Stop Asymmetrical Bridge 600 V 150 A 340 W Through Hole SP3

Datasheet Not provided

Specifications

Configuration: Asymmetrical Bridge
Current - Collector (Ic) (Max): 150 A
Current - Collector Cutoff (Max): 250 µA
IGBT Type: Trench Field Stop
Input: Standard
Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V
Mfr: Microsemi Corporation
Mounting Type: Through Hole
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Package: Bulk
Package / Case: SP3
Power - Max: 340 W
Series: -
Supplier Device Package: SP3
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
Voltage - Collector Emitter Breakdown (Max): 600 V