2SK4150TZ-E product image

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Product details

2SK4150TZ-E

Availability on request

Manufacturer: Renesas Electronics America Inc
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR)

Description

N-Channel 250 V 400mA (Ta) 750mW (Ta) Through Hole TO-92

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Drain to Source Voltage (Vdss): 250 V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 25 V
Mfr: Renesas Electronics America Inc
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Package: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 5.7Ohm @ 200mA, 4V
Series: -
Supplier Device Package: TO-92
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±10V
Vgs(th) (Max) @ Id: -