2SK1859-E product image

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Product details

2SK1859-E

Availability on request

Manufacturer: Renesas Electronics America Inc
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

N-Channel 900 V 6A (Ta) 60W (Tc) Through Hole TO-3P

Datasheet Not provided

Specifications

Base Product Number: 2SK1859
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 900 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 10 V
Mfr: Renesas Electronics America Inc
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Package: Tube
Package / Case: TO-220-3 Full Pack
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 3A, 10V
Series: -
Supplier Device Package: TO-3P
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: -