CSD16556Q5B product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

CSD16556Q5B

Availability on request

Manufacturer: Texas Instruments
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

N-Channel 25 V 100A (Tc) 3.2W (Ta), 191W (Tc) Surface Mount 8-VSONP (5x6)

Datasheet Not provided

Specifications

Base Product Number: CSD16556
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 25 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6180 pF @ 15 V
Mfr: Texas Instruments
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: 8-PowerTDFN
Power Dissipation (Max): 3.2W (Ta), 191W (Tc)
Rds On (Max) @ Id, Vgs: 1.07mOhm @ 30A, 10V
Series: NexFET™
Supplier Device Package: 8-VSONP (5x6)
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 1.7V @ 250µA