AUIRFU3607 product image

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Product details

AUIRFU3607

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

N-Channel 75 V 56A (Tc) 140W (Tc) Through Hole I-PAK

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Drain to Source Voltage (Vdss): 75 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
Mfr: Infineon Technologies
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V
Series: HEXFET®
Supplier Device Package: I-PAK
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 100µA