AUIRFU4292 product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

AUIRFU4292

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

N-Channel 250 V 9.3A (Tc) 100W (Tc) Through Hole I-PAK

Datasheet View datasheet

Specifications

Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Drain to Source Voltage (Vdss): 250 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 25 V
Mfr: Infineon Technologies
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 345mOhm @ 5.6A, 10V
Series: HEXFET®
Supplier Device Package: I-PAK
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 5V @ 50µA