AUIRF5210S product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

AUIRF5210S

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

P-Channel 100 V 38A (Tc) 3.1W (Ta), 170W (Tc) Surface Mount D2PAK

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 25 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max): 3.1W (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 38A, 10V
Series: HEXFET®
Supplier Device Package: D2PAK
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250µA