BSM180D12P2C101 product image

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Product details

BSM180D12P2C101

Availability on request

Manufacturer: Rohm Semiconductor
Category: Transistors - FETs, MOSFETs - Arrays
Package: Bulk

Description

Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 204A (Tc) 1130W Module

Datasheet View datasheet

Specifications

Base Product Number: BSM180
Current - Continuous Drain (Id) @ 25°C: 204A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
FET Feature: Silicon Carbide (SiC)
FET Type: 2 N-Channel (Half Bridge)
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 10V
Mfr: Rohm Semiconductor
Operating Temperature: -40°C ~ 150°C (TJ)
Package: Bulk
Package / Case: Module
Power - Max: 1130W
Rds On (Max) @ Id, Vgs: -
Series: -
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 4V @ 35.2mA