BUK9E8R5-40E,127 product image

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Product details

BUK9E8R5-40E,127

Availability on request

Manufacturer: NXP USA Inc.
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

N-Channel 40 V 75A (Tc) 96W (Tc) Through Hole I2PAK

Datasheet Not provided

Specifications

Base Product Number: BUK9
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 40 V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 20.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Mfr: NXP USA Inc.
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 20A, 10V
Series: TrenchMOS™
Supplier Device Package: I2PAK
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA