BUK9E1R9-40E,127 product image

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Product details

BUK9E1R9-40E,127

Availability on request

Manufacturer: NXP USA Inc.
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

N-Channel 40 V 120A (Tj) Through Hole I2PAK

Datasheet Not provided

Specifications

Base Product Number: BUK9
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Drain to Source Voltage (Vdss): 40 V
FET Feature: -
FET Type: N-Channel
Mfr: NXP USA Inc.
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Series: -
Supplier Device Package: I2PAK
Technology: MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id: -