AUIRL2203N product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

AUIRL2203N

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

N-Channel 30 V 75A (Tc) 180W (Tc) Through Hole TO-220AB

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Mfr: Infineon Technologies
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tube
Package / Case: TO-220-3
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V
Series: HEXFET®
Supplier Device Package: TO-220AB
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±16V
Vgs(th) (Max) @ Id: 1V @ 250µA