FDD86113LZ product image

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Product details

FDD86113LZ

Availability on request

Manufacturer: onsemi
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

N-Channel 100 V 4.2A (Ta), 5.5A (Tc) 3.1W (Ta), 29W (Tc) Surface Mount TO-252AA

Datasheet View datasheet

Specifications

Base Product Number: FDD86113
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 5.5A (Tc)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 50 V
Mfr: onsemi
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max): 3.1W (Ta), 29W (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 4.2A, 10V
Series: PowerTrench®
Supplier Device Package: TO-252AA
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3V @ 250µA