AOWF412 product image

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Product details

AOWF412

Availability on request

Manufacturer: Alpha & Omega Semiconductor Inc.
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

N-Channel 100 V 7.8A (Ta), 30A (Tc) 2.1W (Ta), 33W (Tc) Through Hole TO-262F

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 30A (Tc)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 50 V
Mfr: Alpha & Omega Semiconductor Inc.
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Power Dissipation (Max): 2.1W (Ta), 33W (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 20A, 10V
Series: SDMOS™
Supplier Device Package: TO-262F
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±25V
Vgs(th) (Max) @ Id: 3.8V @ 250µA