APT94N65B2C3G product image

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Product details

APT94N65B2C3G

Availability on request

Manufacturer: Microsemi Corporation
Category: Transistors - FETs, MOSFETs - Single
Package: Tube

Description

N-Channel 650 V 94A (Tc) 833W (Tc) Through Hole T-MAX™ [B2]

Datasheet Not provided

Specifications

Base Product Number: APT94N65
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Drain to Source Voltage (Vdss): 650 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 580 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13940 pF @ 25 V
Mfr: Microsemi Corporation
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-247-3 Variant
Power Dissipation (Max): 833W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 47A, 10V
Series: CoolMOS™
Supplier Device Package: T-MAX™ [B2]
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3.9V @ 5.8mA