APT102GA60B2 product image

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Product details

APT102GA60B2

Availability on request

Manufacturer: Microchip Technology
Category: Transistors - IGBTs - Single
Package: Tube

Description

IGBT PT 600 V 183 A 780 W Through Hole

Datasheet Not provided

Specifications

Base Product Number: APT102
Current - Collector (Ic) (Max): 183 A
Current - Collector Pulsed (Icm): 307 A
Gate Charge: 294 nC
IGBT Type: PT
Input Type: Standard
Mfr: Microchip Technology
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tube
Package / Case: TO-247-3 Variant
Power - Max: 780 W
Series: POWER MOS 8™
Switching Energy: 1.354mJ (on), 1.614mJ (off)
Td (on/off) @ 25°C: 28ns/212ns
Test Condition: 400V, 62A, 4.7Ohm, 15V
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 62A
Voltage - Collector Emitter Breakdown (Max): 600 V