CSD25211W1015 product image

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Product details

CSD25211W1015

Availability on request

Manufacturer: Texas Instruments
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

P-Channel 20 V 3.2A (Ta) 1W (Ta) Surface Mount 6-DSBGA (1x1.5)

Datasheet Not provided

Specifications

Base Product Number: CSD25211
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Drain to Source Voltage (Vdss): 20 V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
FET Feature: -
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 10 V
Mfr: Texas Instruments
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: 6-UFBGA, DSBGA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 1.5A, 4.5V
Series: NexFET™
Supplier Device Package: 6-DSBGA (1x1.5)
Technology: MOSFET (Metal Oxide)
Vgs (Max): -6V
Vgs(th) (Max) @ Id: 1.1V @ 250µA