2SK3483-AZ product image

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Product details

2SK3483-AZ

Availability on request

Manufacturer: Renesas Electronics America Inc
Category: Transistors - FETs, MOSFETs - Single
Package: Bulk

Description

N-Channel 100 V 28A (Ta) 1W (Ta), 40W (Tc) Through Hole TO-251

Datasheet Not provided

Specifications

Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 10 V
Mfr: Renesas Electronics America Inc
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Package: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Max): 1W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 14A, 10V
Series: -
Supplier Device Package: TO-251
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: -