2SJ649-AZ product image

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Product details

2SJ649-AZ

Availability on request

Manufacturer: Renesas Electronics America Inc
Category: Transistors - FETs, MOSFETs - Single
Package: Bulk

Description

P-Channel 60 V 20A (Tc) 2W (Ta), 25W (Tc) Through Hole TO-220 Isolated Tab

Datasheet Not provided

Specifications

Base Product Number: 2SJ649
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 60 V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
FET Feature: -
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V
Mfr: Renesas Electronics America Inc
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Package: Bulk
Package / Case: TO-220-3 Isolated Tab
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 10A, 10V
Series: -
Supplier Device Package: TO-220 Isolated Tab
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: -