2SC6097-E product image

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Product details

2SC6097-E

Availability on request

Manufacturer: onsemi
Category: Transistors - Bipolar (BJT) - Single
Package: Bag

Description

Bipolar (BJT) Transistor NPN 60 V 3 A 390MHz 800 mW Through Hole TP

Datasheet View datasheet

Specifications

Base Product Number: 2SC6097
Current - Collector (Ic) (Max): 3 A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 390MHz
Mfr: onsemi
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Package: Bag
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Power - Max: 800 mW
Series: -
Supplier Device Package: TP
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 135mV @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max): 60 V