SI5509DC-T1-GE3 product image

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Product details

SI5509DC-T1-GE3

Availability on request

Manufacturer: Vishay Siliconix
Category: Transistors - FETs, MOSFETs - Arrays
Package: Tape & Reel (TR)

Description

Mosfet Array N and P-Channel 20V 6.1A, 4.8A 4.5W Surface Mount 1206-8 ChipFET™

Datasheet View datasheet

Specifications

Base Product Number: SI5509
Current - Continuous Drain (Id) @ 25°C: 6.1A, 4.8A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V
Mfr: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Power - Max: 4.5W
Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 4.5V
Series: TrenchFET®
Supplier Device Package: 1206-8 ChipFET™
Vgs(th) (Max) @ Id: 2V @ 250µA