Skip to main content
Dechoele
Prepare BOM Enquiry Request a Quote
SI6562CDQ-T1-GE3 product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

SI6562CDQ-T1-GE3

Availability on request

Manufacturer
Vishay Siliconix
Category
Transistors - FETs, MOSFETs - Arrays
Package
Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

Mosfet Array N and P-Channel 20V 6.7A, 6.1A 1.6W, 1.7W Surface Mount 8-TSSOP

Datasheet View datasheet (opens in a new window)
Specifications
Base Product Number
SI6562
Current - Continuous Drain (Id) @ 25°C
6.7A, 6.1A
Drain to Source Voltage (Vdss)
20V
FET Feature
Logic Level Gate
FET Type
N and P-Channel
Gate Charge (Qg) (Max) @ Vgs
23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
850pF @ 10V
Mfr
Vishay Siliconix
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Package
Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case
8-TSSOP (0.173", 4.40mm Width)
Power - Max
1.6W, 1.7W
Rds On (Max) @ Id, Vgs
22mOhm @ 5.7A, 4.5V
Series
TrenchFET®
Supplier Device Package
8-TSSOP
Vgs(th) (Max) @ Id
1.5V @ 250µA

Continue browsing

These products share the same category. Suitability must be confirmed independently.