SI5517DU-T1-GE3 product image

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Product details

SI5517DU-T1-GE3

Availability on request

Manufacturer: Vishay Siliconix
Category: Transistors - FETs, MOSFETs - Arrays
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

Mosfet Array N and P-Channel 20V 6A 8.3W Surface Mount PowerPAK® ChipFet Dual

Datasheet View datasheet

Specifications

Base Product Number: SI5517
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Mfr: Vishay Siliconix
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: PowerPAK® ChipFET™ Dual
Power - Max: 8.3W
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.4A, 4.5V
Series: TrenchFET®
Supplier Device Package: PowerPAK® ChipFet Dual
Vgs(th) (Max) @ Id: 1V @ 250µA