BSC190N12NS3GATMA1 product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

BSC190N12NS3GATMA1

Availability on request

Manufacturer: Infineon Technologies
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®

Description

N-Channel 120 V 8.6A (Ta), 44A (Tc) 69W (Tc) Surface Mount PG-TDSON-8-1

Datasheet View datasheet

Specifications

Base Product Number: BSC190
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 44A (Tc)
Drain to Source Voltage (Vdss): 120 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 60 V
Mfr: Infineon Technologies
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Package: Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case: 8-PowerTDFN
Power Dissipation (Max): 69W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 39A, 10V
Series: OptiMOS™
Supplier Device Package: PG-TDSON-8-1
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 42µA