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BDP950H6327XTSA1 product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

BDP950H6327XTSA1

Availability on request

Manufacturer
Infineon Technologies
Category
Transistors - Bipolar (BJT) - Single
Package
Tape & Reel (TR)

Description

Bipolar (BJT) Transistor PNP 60 V 3 A 100MHz 5 W Surface Mount PG-SOT223-4-10

Specifications
Base Product Number
BDP950
Current - Collector (Ic) (Max)
3 A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
85 @ 500mA, 1V
Frequency - Transition
100MHz
Mfr
Infineon Technologies
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Package
Tape & Reel (TR)
Package / Case
TO-261-4, TO-261AA
Power - Max
5 W
Series
-
Supplier Device Package
PG-SOT223-4-10
Transistor Type
PNP
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max)
60 V