APTGF90DH60T3G product image

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Product details

APTGF90DH60T3G

Availability on request

Manufacturer: Microsemi Corporation
Category: Transistors - IGBTs - Modules
Package: Bulk

Description

IGBT Module NPT Asymmetrical Bridge 600 V 110 A 416 W Chassis Mount SP3

Datasheet Not provided

Specifications

Configuration: Asymmetrical Bridge
Current - Collector (Ic) (Max): 110 A
Current - Collector Cutoff (Max): 250 µA
IGBT Type: NPT
Input: Standard
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Mfr: Microsemi Corporation
Mounting Type: Chassis Mount
NTC Thermistor: Yes
Operating Temperature: -
Package: Bulk
Package / Case: SP3
Power - Max: 416 W
Series: -
Supplier Device Package: SP3
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Voltage - Collector Emitter Breakdown (Max): 600 V