BUK7E4R3-75C,127 product image

Image shown for reference only. Refer to the product datasheet for exact specifications.

Product details

BUK7E4R3-75C,127

Availability on request

Manufacturer: NXP USA Inc.
Category: Transistors - FETs, MOSFETs - Single
Package: I2PAK

Description

N-Channel 75 V 100A (Tc) 333W (Tc) Through Hole I2PAK

Datasheet Not provided

Specifications

Base Product Number: BUK7
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 75 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11659 pF @ 25 V
Mfr: NXP USA Inc.
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Package: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Power Dissipation (Max): 333W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V
Series: TrenchMOS™
Supplier Device Package: I2PAK
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 1mA