GT10J312(Q) product image

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Product details

GT10J312(Q)

Availability on request

Manufacturer: Toshiba Semiconductor and Storage
Category: Transistors - IGBTs - Single
Package: Tube

Description

IGBT 600 V 10 A 60 W Surface Mount TO-220SM

Datasheet Not provided

Specifications

Base Product Number: GT10J312
Current - Collector (Ic) (Max): 10 A
Current - Collector Pulsed (Icm): 20 A
IGBT Type: -
Input Type: Standard
Mfr: Toshiba Semiconductor and Storage
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Package: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Power - Max: 60 W
Reverse Recovery Time (trr): 200 ns
Series: -
Supplier Device Package: TO-220SM
Switching Energy: -
Td (on/off) @ 25°C: 400ns/400ns
Test Condition: 300V, 10A, 100Ohm, 15V
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
Voltage - Collector Emitter Breakdown (Max): 600 V