2SK3662(F) product image

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Product details

2SK3662(F)

Availability on request

Manufacturer: Toshiba Semiconductor and Storage
Category: Transistors - FETs, MOSFETs - Single
Package: Bulk

Description

N-Channel 60 V 35A (Ta) 35W (Tc) Through Hole TO-220NIS

Datasheet Not provided

Specifications

Base Product Number: 2SK3662
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Drain to Source Voltage (Vdss): 60 V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 10 V
Mfr: Toshiba Semiconductor and Storage
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Package: Bulk
Package / Case: TO-220-3 Full Pack
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 18A, 10V
Series: U-MOSIII
Supplier Device Package: TO-220NIS
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2.5V @ 1mA