2SK2883(TE24L,Q) product image

Image shown for reference. Confirm specifications in the datasheet.

Product details

2SK2883(TE24L,Q)

Availability on request

Manufacturer: Toshiba Semiconductor and Storage
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR)

Description

N-Channel 800 V 3A (Ta) 75W (Tc) Surface Mount TO-220SM

Datasheet Not provided

Specifications

Base Product Number: 2SK2883
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drain to Source Voltage (Vdss): 800 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: N-Channel
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Mfr: Toshiba Semiconductor and Storage
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Package: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.5A, 10V
Series: -
Supplier Device Package: TO-220SM
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 4V @ 1mA