2SJ610(TE16L1,NQ) product image

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Product details

2SJ610(TE16L1,NQ)

Availability on request

Manufacturer: Toshiba Semiconductor and Storage
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR)

Description

P-Channel 250 V 2A (Ta) 20W (Ta) Surface Mount PW-MOLD

Datasheet Not provided

Specifications

Base Product Number: 2SJ610
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 250 V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Feature: -
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 381 pF @ 10 V
Mfr: Toshiba Semiconductor and Storage
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Package: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max): 20W (Ta)
Rds On (Max) @ Id, Vgs: 2.55Ohm @ 1A, 10V
Series: -
Supplier Device Package: PW-MOLD
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 3.5V @ 1mA