2SJ360(TE12L,F) product image

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Product details

2SJ360(TE12L,F)

Availability on request

Manufacturer: Toshiba Semiconductor and Storage
Category: Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR)

Description

P-Channel 60 V 1A (Ta) 500mW (Ta) Surface Mount PW-MINI

Datasheet Not provided

Specifications

Base Product Number: 2SJ360
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drain to Source Voltage (Vdss): 60 V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
FET Feature: -
FET Type: P-Channel
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 10 V
Mfr: Toshiba Semiconductor and Storage
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Package: Tape & Reel (TR)
Package / Case: TO-243AA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 730mOhm @ 500mA, 10V
Series: -
Supplier Device Package: PW-MINI
Technology: MOSFET (Metal Oxide)
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 2V @ 1mA