2SA1987-O(Q) product image

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Product details

2SA1987-O(Q)

Availability on request

Manufacturer: Toshiba Semiconductor and Storage
Category: Transistors - Bipolar (BJT) - Single
Package: Bulk

Description

Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 180 W Through Hole TO-3P(L)

Datasheet View datasheet

Specifications

Base Product Number: 2SA1987
Current - Collector (Ic) (Max): 15 A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Mfr: Toshiba Semiconductor and Storage
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Package: Bulk
Package / Case: TO-3PL
Power - Max: 180 W
Series: -
Supplier Device Package: TO-3P(L)
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Voltage - Collector Emitter Breakdown (Max): 230 V