2SA1930(Q,M) product image

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Product details

2SA1930(Q,M)

Availability on request

Manufacturer: Toshiba Semiconductor and Storage
Category: Transistors - Bipolar (BJT) - Single
Package: Bulk

Description

Bipolar (BJT) Transistor PNP 180 V 2 A 200MHz 2 W Through Hole TO-220NIS

Datasheet Not provided

Specifications

Base Product Number: 2SA1930
Current - Collector (Ic) (Max): 2 A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 200MHz
Mfr: Toshiba Semiconductor and Storage
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Package: Bulk
Package / Case: TO-220-3 Full Pack
Power - Max: 2 W
Series: -
Supplier Device Package: TO-220NIS
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max): 180 V